发明名称 SEMICONDUCTOR STRUCTURE PROCESS USING PLURALITY OF LASER BEAM SPOTS
摘要 <P>PROBLEM TO BE SOLVED: To process a conductive link on or inside a semiconductor substrate by using a plurality of laser beams. <P>SOLUTION: For two or more Ns, N sets of laser pulses are used for gaining an advantage of a throughput. The links are arranged as a plurality of rows 510 and 520, being substantially parallel to each other, which extend along almost longitudinal direction. The N sets of laser pulses are propagated along respective N optical beam axes until projected on a selected structure. The acquired pattern of laser beam spots is any one of those in which spots are partially overlapped or entirely overlapped on links in N separate rows, separate links in the same row, and the same link. The acquired laser spots have either one or both of the offset in longitudinal direction of the row from each other, and the offset in the direction vertical to the longitudinal direction of the row. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012138597(A) 申请公布日期 2012.07.19
申请号 JP20120035216 申请日期 2012.02.21
申请人 ELECTRO SCIENTIFIC INDUSTRIES INC 发明人 KELLY J BRULAND;HO WAI LO;BRIAN W BAIRD;FRANK G EVANS;RICHARD S HARRIS;SUN YUNLONG;STEPHEN N SWARINGEN
分类号 H01L21/82;B23K26/00;B23K26/06;B23K26/067;B23K26/36 主分类号 H01L21/82
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