| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a polysiloxane condensation reaction product varnish suitable for embedding trenches formed in semiconductor elements. <P>SOLUTION: The method for producing the polysiloxane condensation reaction product varnish comprises: (i) a process of obtaining a polysiloxane compound originated from a silane compound represented by general formula: R<SP POS="POST">1</SP><SB POS="POST">n</SB>SiX<SP POS="POST">1</SP><SB POS="POST">4-n</SB>(wherein, n is an integer of 0-3; R<SP POS="POST">1</SP>is H or a 1-10C hydrocarbon group; X<SP POS="POST">1</SP>is a halogen atom, 1-6C alkoxy or acetoxy), (ii) a process of reacting the polysiloxane compound with silica particles in a solvent at 50°C or more at pH 3 to 7 to obtain a polysiloxane condensation product solution, and (iii) a process of adding at least one solvent selected from alcohols, ketones, esters, ethers, amides and hydrocarbon-based solvents and having a boiling point of 100 to 200°C to the polysiloxane condensation product solution and then distilling the mixture to distil away components having boiling points of 100°C or less. <P>COPYRIGHT: (C)2012,JPO&INPIT |
