发明名称 |
Semiconductor Device and Method of Manufacturing Thereof |
摘要 |
A method for manufacturing a semiconductor device and a semiconductor device are disclosed. The method comprises forming a trench in a substrate, partially filling the trench with a first semiconductive material, forming an interface along a surface of the first semiconductive material, and filling the trench with a second semiconductive material. The semiconductor device includes a first electrode arranged along sidewalls of a trench and a dielectric arranged over the first electrode. The semiconductor device further includes a second electrode at least partially filling the trench, wherein the second electrode comprises an interface within the second electrode.
|
申请公布号 |
US2012181656(A1) |
申请公布日期 |
2012.07.19 |
申请号 |
US201113007392 |
申请日期 |
2011.01.14 |
申请人 |
LEHNERT WOLFGANG;STADTMUELLER MICHAEL;POMPL STEFAN;MEYER MARKUS |
发明人 |
LEHNERT WOLFGANG;STADTMUELLER MICHAEL;POMPL STEFAN;MEYER MARKUS |
分类号 |
H01L29/92;H01L21/329;H01L27/08 |
主分类号 |
H01L29/92 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|