| 摘要 |
According to one embodiment, a nonvolatile memory device includes a substrate, an interconnect layer, a memory layer, a circuit layer, first and second contact interconnects. The interconnect layer is provided on the substrate and includes first and second interconnects. The memory layer is provided between the substrate and the interconnect layer and includes first and second memory cell array units. The first and second memory cell array units include a plurality of memory cells. The circuit layer is provided between the memory layer and the substrate and includes a first circuit unit. The first contact interconnect is provided between the first and second memory cell array units and electrically connects one end of the first circuit unit to the first interconnect. The second contact interconnect electrically connects a second end of the first circuit unit different from the first end to the second interconnect. |
