发明名称 |
Multi-Layer Single Crystal 3D Stackable Memory |
摘要 |
Technology is described herein for manufacturing a three-dimensional 3D stacked memory structure having multiple layers of single crystal silicon or other semiconductor. The multiple layers of single crystal semiconductor are suitable for implementing multiple levels of high performance memory cells. |
申请公布号 |
US2012181654(A1) |
申请公布日期 |
2012.07.19 |
申请号 |
US201113223116 |
申请日期 |
2011.08.31 |
申请人 |
LUE HANG-TING;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LUE HANG-TING |
分类号 |
H01L21/3105;H01L29/06 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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