发明名称 |
SUBSTRATE-PROCESSING DEVICE |
摘要 |
<p>[Problem] To make it possible to transfer substrates between single-wafer processing devices and batch processing devices continuously and efficiently, thereby improving the throughput of a combined single-wafer/batch process. [Solution] In this substrate-processing device, a processing station (10) is arranged in the center of the system such that the long axis (x-axis) thereof is horizontal, and a loader (12) and unloader (14) are connected to the lengthwise ends thereof. Said processing station (10) comprises the following, in the process-flow order from the loader (12) to the unloader (14): a single-wafer-only block (10A), a combined single-wafer/batch block (10B), and a single-wafer-only block (10C). The combined single-wafer/batch block (10B) in the middle is provided with: one or more single-wafer working-electrode film-formation units (36); one or more single-wafer grid-wiring film-formation units (38); a batch heat-treatment device (40); and a batch baking device (42).</p> |
申请公布号 |
WO2012096144(A1) |
申请公布日期 |
2012.07.19 |
申请号 |
WO2012JP00024 |
申请日期 |
2012.01.05 |
申请人 |
TOKYO ELECTRON LIMITED;FURUTANI, GORO;TERADA, TAKASHI;FUKUDA, YOSHITERU;WADA, NORIO |
发明人 |
FURUTANI, GORO;TERADA, TAKASHI;FUKUDA, YOSHITERU;WADA, NORIO |
分类号 |
H01L21/677;H01L21/02;H01L31/04;H01M14/00 |
主分类号 |
H01L21/677 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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