发明名称 Semiconductor device for power converter, has protective element made of polar resin material that is arranged in region surrounding semiconductor chip at main surface of heat spreader
摘要 <p>The semiconductor device (100) has semiconductor chip (4) that is installed on main surface of a heat spreader (2) through soldering layer (3). The semiconductor chip and main surface of the heat spreader are sealed with a molding resin (5). A protective element (1) is arranged in the region surrounding semiconductor chip at the main surface of the heat spreader. The protective element is made of polar resin material with flexural strength and glass transition temperature higher than that molding resin.</p>
申请公布号 DE102011088442(A1) 申请公布日期 2012.07.19
申请号 DE20111088442 申请日期 2011.12.13
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 YAMAGUCHI, YOSHIHIRO;UEDA, TETSUYA
分类号 H01L23/16;H01L23/31;H01L23/36 主分类号 H01L23/16
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