发明名称 APPARATUS FOR CHEMICAL VAPOR DEPOSITION
摘要 <p>PURPOSE: A CVD(Chemical Vapor Deposition) apparatus is provided to obtain a uniform wide area thin film of a high quality by minimizing the thermal expansion distortion of a shower head. CONSTITUTION: A CVD apparatus comprises a process chamber(100), a back plate(200), a gas diffusion member(300), a shower head(400), and a susceptor(500). The process chamber partitions a reaction space(150). The back plate comprises a gas inflow port(210) in a central part. The gas diffusion member is separately arranged in the lower part of the gas inflow port and joined to the back plate by a first combining member. The gas diffusion member diffuses the process gas being supplied through the gas inflow port. A central part of the shower head is joined to the gas diffusion member by a second joining member and a plurality of jetting holes is punched in the shower hole. The susceptor is separately arranged in the lower part of the shower head and supports a substrate(800). A plurality of gas inducing holes vertically passes through the gas diffusion member so that the process gas being supplied through the gas inflow port is diffused to the lower part of the gas diffusion member.</p>
申请公布号 KR20120081437(A) 申请公布日期 2012.07.19
申请号 KR20110002779 申请日期 2011.01.11
申请人 SNT. CO., LTD. 发明人 HUH, YUN SUNG;PARK, SEUNG IL
分类号 C23C16/455;C23C16/44;H01L21/205 主分类号 C23C16/455
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