| 摘要 |
A thin film diode (10A) included in a semiconductor device according to the present invention includes: a semiconductor layer having first, second, and third semiconductor regions; an insulating layer (22A, 23A) formed on the semiconductor layer; and first and second contact holes penetrating through the insulating layer (22A, 23A). The first semiconductor region contains an impurity of a first-conductivity type at a first concentration; the second semiconductor region contains an impurity of a second-conductivity type different from the first conductivity type at a second concentration; and the third semiconductor region contains the first-conductivity type impurity at a third concentration lower than the first concentration, or contains the second-conductivity type impurity at a third concentration lower than the second concentration. The first semiconductor region conforms to the first contact hole, or the second semiconductor region conforms to the second contact hole.
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