发明名称 |
Method of Fabricating Silicon Quantum Dot Layer and Device Manufactured Using the Same |
摘要 |
Disclosed are a method of fabricating a silicon quantum dot layer and a device manufactured using the same. A first capping layer is formed on a substrate, and a silicon-containing precursor layer is formed on the first capping layer. A second capping layer is formed on the silicon-containing precursor layer. The first capping layer, the silicon-containing precursor layer, and the second capping layer are irradiated to convert the silicon-containing precursor layer into a stack including a first poly-crystalline silicon layer, a silicon quantum dot layer on the first poly-crystalline silicon layer, and a second poly-crystalline silicon layer on the silicon quantum dot layer.
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申请公布号 |
US2012181503(A1) |
申请公布日期 |
2012.07.19 |
申请号 |
US201113236439 |
申请日期 |
2011.09.19 |
申请人 |
LEE CZANG-HO;SEO JOON-YOUNG;KIM DONG-JIN |
发明人 |
LEE CZANG-HO;SEO JOON-YOUNG;KIM DONG-JIN |
分类号 |
H01L33/06;B82Y40/00;B82Y99/00;H01L21/20;H01L29/775;H01L33/08 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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