SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor structure and a manufacturing method thereof are provided. The method includes: providing a first semiconductor layer (200); providing a first dielectric material layer (210) on the first semiconductor layer, and defining openings in the first dielectric material layer; epitaxially growing a second semiconductor layer (220) on the first semiconductor layer through the openings, wherein the material of the second semiconductor layer is different from that of the first semiconductor layer; and in the second semiconductor layer, forming second dielectric material plugs (260) in the openings defined in the first dielectric material layer before and at the mid-position between adjacent such openings. The semiconductor structure has no or merely few epitaxial defects.