WAFER FOR BACKSIDE ILLUMINATION TYPE SOLID IMAGING DEVICE, PRODUCTION METHOD THEREOF AND BACKSIDE ILLUMINATION TYPE SOLID IMAGING DEVICE

摘要

PURPOSE: A wafer for a rear emission type solid state image pickup device, a manufacturing method thereof, and the rear emission type solid state image pickup device are provided to prevent heavy metal contamination by forming an active layer on an insulation layer. CONSTITUTION: A photoelectric conversion device(50) and a charge transmission transistor(60) are formed on a front surface(40a). A plurality of pixels(70) are formed on a rear surface(20a). The pixel has a light receiving surface. An active layer(40) is formed on a support substrate. The support substrate is made of C containing P type semiconductor materials.