发明名称 PLASMA PROCESSING APPARATUS
摘要 PURPOSE: A plasma processing apparatus is provided to prevent the generation of an electron dense region by forming a thick dielectric window. CONSTITUTION: A chamber(100) includes a susceptor(110) mounting a substrate. A lead frame(210) includes an outer frame(211) forming an outer frame on the top of the susceptor and a supporting frame(212) formed in the outer frame in order to form a plurality of square frames on a space formed by the outer frame. A plurality of dielectric windows(220) is respectively installed on a plurality of square frames. The plurality of dielectric windows includes a first region dielectric window(221) and a second region dielectric window(222). The first region dielectric window is formed to be thicker than the second region dielectric window in order to prevent the concentration of electrons at a lower portion.
申请公布号 KR20120080979(A) 申请公布日期 2012.07.18
申请号 KR20110002472 申请日期 2011.01.10
申请人 LIGADP CO., LTD. 发明人 LEE, YOUNG JONG;SON, HYOUNG KYU
分类号 H05H1/46;H01L21/205;H01L21/3065 主分类号 H05H1/46
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