发明名称 |
EXTENSIONS OF SELF-ASSEMBLED STRUCTURES TO INCREASED DIMENSIONS VIA A BOOTSTRAP SELF-TEMPLATING METHOD |
摘要 |
<p>A semiconductor structure comprises a first self-assembled block copolymer material within a trench in a substrate and a second self-assembled block copolymer material overlying the first self-assembled block copolymer material. The first self-assembled block copolymer material comprises self-assembled polymer domains registered to sidewalls of the trench and extending a length of the trench. The second self-assembled block copolymer material comprises self-assembled polymer domains overlying and registered to the self-assembled polymer domains of the first self-assembled block copolymer material. The first self-assembled block copolymer material comprises a different material from the first self-assembled block copolymer material. A template comprises lines extending a length of a trench in a substrate and separated by openings exposing a floor of the trench in a substrate. Each of the lines comprises the first self-assembled block copolymer material and the second self-assembled block copolymer material overlying the first self-assembled block copolymer material.</p> |
申请公布号 |
KR101166619(B1) |
申请公布日期 |
2012.07.18 |
申请号 |
KR20097024258 |
申请日期 |
2008.04.09 |
申请人 |
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发明人 |
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分类号 |
B81C99/00;B81C1/00;G03F7/00;H01L21/033 |
主分类号 |
B81C99/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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