| 摘要 |
Improved sensors are disclosed that include a heater resistor (112) and/or one or more sensor resistors (114). In some instances, the heater resistor (112) may be configured to have a zero or near-zero temperature coefficient of resistance (TCR), while one or more sensor resistors (114) may be configured to have a non-zero higher TCR. In some instances, the heater resistor (112) may include a polysilicon material that is doped with a first concentration of dopant (306), and the one or more sensing elements may include a polysilicon material that is doped with a second higher concentration of dopant (306). In some cases, the first concentration of dopant (306) may be configured to provide a heater resistor (112) that has a zero or near-zero temperature coefficient of resistance (TCR). |
