NONVOLATILE MEMORY DEVICE USING VARIABLE RESISTIVE ELEMENT AND MEMORY SYSTEM COMPRISING THE SAME

摘要

PURPOSE: A nonvolatile memory device using a resistor and a memory system including the same are provided to reduce current consumption by not requiring a pumping circuit which generates a boosted voltage. CONSTITUTION: A comparing unit(120) outputs a control signal according to a comparison result of the voltage of a first node and a first reference voltage. A read current providing unit(130) is connected between a first voltage and the first node and provides a read current in response to a control signal. A mirroring unit(150) is connected between a second voltage and a second node and provides a mirroring current obtained by mirroring the read current in response to the control signal. A sensing unit(170) senses the voltage of a second node.