发明名称 Method of manufacturing semiconductor apparatus, the semiconductor apparatus, and ignitor using the semiconductor apparatus
摘要 A method of manufacturing a semiconductor apparatus according to the invention includes the steps of: coating solder 31 on an predetermined area in the upper surface of lead frame 30; mounting chip 32 on solder 31; melting solder 31 with hot plate 33 for bonding chip 32 to lead frame 30; wiring with bonding wires 34; turning lead frame 30 upside down; placing lead frame 30 turned upside down on heating cradle 35; coating solder 36, the melting point of which is lower than the solder 31 melting point; mounting electronic part 37 on solder 36; and melting solder 36 with heating cradle 35 for bonding electronic part 37 to lead frame 30. The bonding with solder 36 is conducted at a high ambient temperature. The semiconductor apparatus and the manufacturing method thereof facilitate mounting semiconductor devices and electronic parts on both surfaces of a lead frame divided to form wiring circuits without through complicated manufacturing steps.
申请公布号 EP2477223(A2) 申请公布日期 2012.07.18
申请号 EP20110195847 申请日期 2011.12.28
申请人 FUJI ELECTRIC CO., LTD. 发明人 KATSUKI, TAKASHI
分类号 H01L23/495;F02P3/045;H01L23/16;H01L25/16 主分类号 H01L23/495
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