发明名称 HETEROJUNCTION DEVICE
摘要 <p>A solid-state p-n heterojunction comprising an organic p-type material in contact with an n-type material wherein said n-type material is surface-sensitised by at least two sensitizing agents comprising an energy donor sensitizing agent and an energy acceptor sensitizing agent and optionally at least one intermediate sensitizing agent, wherein the emission spectrum of the donor sensitizing agent overlaps with the absorption spectrum of the acceptor sensitizing agent and/or at least one intermediate sensitizing agent where present, and the emission spectrum of at least one intermediate sensitizing agent where present overlaps with the absorption spectrum of the acceptor sensitizing agent and wherein the acceptor sensitizing agent individually has a maximum Absorbed Photon to electron Conversion Efficiency of no less than 40% in an equivalent heterojunction when used as sole sensitizing agent. The invention also provides optoelectronic devices such as solar cells or photo sensors comprising such a p-n heterojunction, and methods for the manufacture of such a heterojunction or device.</p>
申请公布号 EP2476146(A1) 申请公布日期 2012.07.18
申请号 EP20100759695 申请日期 2010.09.13
申请人 ISIS INNOVATION LIMITED 发明人 SNAITH, HENRY, J.
分类号 H01L51/42 主分类号 H01L51/42
代理机构 代理人
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