| 摘要 |
A method is provided for producing a light-emitting diode. In one embodiment, a series of layers is deposited on the silicon surface of a carrier in a direction of growth and a light-emitting diode structure is deposited on the series of layers. The series of layers includes a GaN layer, which is formed with gallium nitride. The series of layers includes a masking layer, which is formed with silicon nitride. The masking layer follows at least part of the GaN layer in the direction of growth. |
