| 摘要 |
<p>Provided is a field-effect transistor including a gate insulating layer, a first semiconductor crystal layer in contact with the gate insulating layer, and a second semiconductor crystal layer lattice-matching or pseudo lattice-matching the first semiconductor crystal layer. Here, the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer are arranged in the order of the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer, the first semiconductor crystal layer is made of Inx1Ga1-x1Asy1P1-y1 (0<x1≰1, 0≰y1≰1), the second semiconductor crystal layer is made of Inx2Ga1-x2Asy2P1-y2 (0≰x2≰1, 0≰y2≰1, y2≠y1), and the electron affinity Ea1 of the first semiconductor crystal layer is lower than the electron affinity Ea2 of the second semiconductor crystal layer.</p> |
