发明名称 |
PLASMA PROCESSING APPARATUS |
摘要 |
PURPOSE: A plasma processing apparatus is provided to lead initial discharge of induced coupled plasma by simultaneously forming inductively coupled plasma and capacitively coupled plasma. CONSTITUTION: A CCP(Capacitively Coupling Plasma) frame(140) can be installed on the same plane as a window frame(130) in a central portion of the window frame. One dielectric window can be located inside the CCP frame. A plurality of dielectric windows can be located on each space divided into a lattice type inside the CCP. The window frame is located in order to support a plurality of dielectric windows around the CCP frame. The window frame can be composed of an outer frame(131) forming an outer edge of the frame and a plurality of bridge frames(132). |
申请公布号 |
KR20120080973(A) |
申请公布日期 |
2012.07.18 |
申请号 |
KR20110002466 |
申请日期 |
2011.01.10 |
申请人 |
LIGADP CO., LTD. |
发明人 |
SON, HYOUNG KYU;LEE, YOUNG JONG;KANG, CHAN HO |
分类号 |
H05H1/46;H01L21/205;H01L21/3065 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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