发明名称 PLASMA PROCESSING APPARATUS
摘要 PURPOSE: A plasma processing apparatus is provided to lead initial discharge of induced coupled plasma by simultaneously forming inductively coupled plasma and capacitively coupled plasma. CONSTITUTION: A CCP(Capacitively Coupling Plasma) frame(140) can be installed on the same plane as a window frame(130) in a central portion of the window frame. One dielectric window can be located inside the CCP frame. A plurality of dielectric windows can be located on each space divided into a lattice type inside the CCP. The window frame is located in order to support a plurality of dielectric windows around the CCP frame. The window frame can be composed of an outer frame(131) forming an outer edge of the frame and a plurality of bridge frames(132).
申请公布号 KR20120080973(A) 申请公布日期 2012.07.18
申请号 KR20110002466 申请日期 2011.01.10
申请人 LIGADP CO., LTD. 发明人 SON, HYOUNG KYU;LEE, YOUNG JONG;KANG, CHAN HO
分类号 H05H1/46;H01L21/205;H01L21/3065 主分类号 H05H1/46
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