发明名称 |
Nonvolatile semiconductor memory device and method for driving the same |
摘要 |
A nonvolatile semiconductor memory device includes a memory cell and a driving unit. The a memory cell has a semiconductor layer having, a channel, and a source region and a drain region provided on both sides of the channel; a first insulating film provided on the channel; a charge retention layer provided on the first insulating film; and a gate electrode provided on the charge retention layer. The driving unit applies a burst signal having a constant amplitude and a constant frequency between the gate electrode and the semiconductor layer and performs at least one of operations of programming and erasing charge on the charge retention layer. |
申请公布号 |
US8223552(B2) |
申请公布日期 |
2012.07.17 |
申请号 |
US20090496064 |
申请日期 |
2009.07.01 |
申请人 |
FUJIKI JUN;MURAOKA KOICHI;YASUDA NAOKI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
FUJIKI JUN;MURAOKA KOICHI;YASUDA NAOKI |
分类号 |
G11C11/40 |
主分类号 |
G11C11/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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