发明名称 Wafer backside grinding with stress relief
摘要 A method of relieving stress in a semiconductor wafer and providing a wafer backside surface finish capable of hiding cosmetic imperfections. Embodiments of the invention include creating a wafer backside surface which can be used for all dies on the semiconductor wafer intended for different product applications and be deposited with backside metallization (BSM) material. The method provides a rough texture on the wafer backside followed by isotropic etching of the wafer backside to recover the wafer strength as well as to preserve the rough texture of the wafer backside. After wafer backside metallization, the rough texture of the wafer backside hides cosmetic imperfections introduced by subsequent processes.
申请公布号 US8222118(B2) 申请公布日期 2012.07.17
申请号 US20080335378 申请日期 2008.12.15
申请人 DYDYK MARK;URQUIZA ARTURO;SINGLETON CHARLES;MCINTOSH TIM;INTEL CORPORATION 发明人 DYDYK MARK;URQUIZA ARTURO;SINGLETON CHARLES;MCINTOSH TIM
分类号 H01L21/46;H01L21/30 主分类号 H01L21/46
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