发明名称 |
Wafer backside grinding with stress relief |
摘要 |
A method of relieving stress in a semiconductor wafer and providing a wafer backside surface finish capable of hiding cosmetic imperfections. Embodiments of the invention include creating a wafer backside surface which can be used for all dies on the semiconductor wafer intended for different product applications and be deposited with backside metallization (BSM) material. The method provides a rough texture on the wafer backside followed by isotropic etching of the wafer backside to recover the wafer strength as well as to preserve the rough texture of the wafer backside. After wafer backside metallization, the rough texture of the wafer backside hides cosmetic imperfections introduced by subsequent processes. |
申请公布号 |
US8222118(B2) |
申请公布日期 |
2012.07.17 |
申请号 |
US20080335378 |
申请日期 |
2008.12.15 |
申请人 |
DYDYK MARK;URQUIZA ARTURO;SINGLETON CHARLES;MCINTOSH TIM;INTEL CORPORATION |
发明人 |
DYDYK MARK;URQUIZA ARTURO;SINGLETON CHARLES;MCINTOSH TIM |
分类号 |
H01L21/46;H01L21/30 |
主分类号 |
H01L21/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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