发明名称 |
Method for fabricating thin film transistor |
摘要 |
A method for fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulating layer is formed on the substrate to cover the gate. A metal oxide material layer is formed on the gate insulating layer. A photoresist layer is formed on the metal oxide material layer, in which a thickness of the photoresist layer above the gate is larger than that of the photoresist layer above two sides adjacent to the gate. A portion of the metal oxide material layer is removed to form a metal oxide active layer by using the photoresist layer as a mask. The photoresist layer above the two sides adjacent to the gate is removed and the remaining photoresist layer covers a portion of the metal oxide active layer. A source and a drain are formed on the metal oxide active layer covered by the photoresist layer. |
申请公布号 |
US8222095(B2) |
申请公布日期 |
2012.07.17 |
申请号 |
US20080258451 |
申请日期 |
2008.10.27 |
申请人 |
LUO FANG-CHEN;LIANG SHUO-WEI;CHIANG SHIN-CHUAN;CHEN CHAO-NAN;YU CHIN-CHIH;TAIWAN TFT LCD ASSOCIATION;CHUNGHWA PICTURE TUBES, LTD.;AU OPTRONICS CORPORATION;HANNSTAR DISPLAY CORPORATION;CHI MEI OPTOELECTRONICS CORPORATION;INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
LUO FANG-CHEN;LIANG SHUO-WEI;CHIANG SHIN-CHUAN;CHEN CHAO-NAN;YU CHIN-CHIH |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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