| 摘要 |
PURPOSE: A diode for a semiconductor device and a manufacturing method thereof are provided to prevent errors of record and read operations of a memory device by buffering an off leakage current in a PN junction diode. CONSTITUTION: A word line contact(203) is formed a semiconductor substrate(201). A word line(205) is formed on the word line contact. A conductive layer(207) is formed on the word line. A first silicon layer(209), a second silicon layer(211), and a third silicon layer(213) are successively formed on the conductive layer. The conductive layer is formed by using metal material. A thermal process is executed after forming the conductive layer, the first silicon layer, and the third silicon layer. |
