Semiconductor device capable of reducing a contact resistance of a lower electrode and a contact pad and providing an align margin between the lower electrode and the contact pad

摘要

A semiconductor device includes an insulation interlayer and an etch stop layer sequentially stacked on a substrate wherein a lower structure including a first contact pad is formed. A second contact pad penetrates the insulation interlayer and the etch stop layer and is connected to the first contact pad. The second contact pad protrudes from the etch stop layer. A pad spacer is provided between the second contact pad and the insulation interlayer. A lower electrode is provided on the etch stop layer and is connected to the second contact pad. A dielectric layer and an upper electrode are sequentially provided on the lower electrode.