发明名称 |
Semiconductor memory device, method of manufacturing the same, and method of screening the same |
摘要 |
A semiconductor memory device includes first and second memory cells each including a variable resistance element and a diode and having a pillar shape, and an insulating layer provided between the first memory cell and the second memory cell and including a void. A central portion of the diode has a smaller width than widths of upper and lower portions of the diode. |
申请公布号 |
US8222626(B2) |
申请公布日期 |
2012.07.17 |
申请号 |
US20100705010 |
申请日期 |
2010.02.12 |
申请人 |
SATO MITSURU;KOMURA MASANORI;KANNO HIROSHI;MUROOKA KENICHI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
SATO MITSURU;KOMURA MASANORI;KANNO HIROSHI;MUROOKA KENICHI |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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