发明名称 |
Method for photoresist pattern removal |
摘要 |
The present disclosure provides a method for making a semiconductor device. The method includes forming a sacrificial layer on a substrate; forming a patterned resist layer on the sacrificial layer; performing an ion implantation to the substrate; applying a first wet etch solution to remove the patterned photoresist layer; and applying a second wet etch solution to remove the sacrificial layer.
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申请公布号 |
US8222149(B2) |
申请公布日期 |
2012.07.17 |
申请号 |
US20090564200 |
申请日期 |
2009.09.22 |
申请人 |
CHANG CHING-YU;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHANG CHING-YU |
分类号 |
H01L21/311 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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