| 摘要 |
A memory cell (100) includes a read circuit (30) whose output wiring is a read bit line (RBIT) and which has a switching transistor (31), a reset transistor (32), and an output wiring driving transistor (33). The switching transistor (31) connects a data holding node (MD) of a storage circuit (10) and a control line (DR) in accordance with a control signal on a read word line (/RWL0). The reset transistor (32) resets the control line (DR) in accordance with a reset control signal (RST). The output wiring driving transistor (33) has a gate connected to the control line (DR), a drain connected to the read bit line (RBIT), and a source connected to a ground power supply. |
