发明名称 TEMPLATED ELECTROCHEMICAL GROWTH OF SINGLE-CRYSTAL CU2O NANOWIRE ARRAYS
摘要 PURPOSE: A mono-crystalline copper oxide nano wire manufacturing method using low-temperature electrochemical growth is provided to guarantee high crystallization of a nano wire and to control the length of a nano wire array from dozens of nano meters to several micro meters. CONSTITUTION: A mono-crystalline copper oxide nano wire manufacturing method is as follows. A nano-porous alumina layer is manufactured from a high purity aluminum sheet by using a two step anodization method. The nano-porous alumina layer is processed by a low-temperature electrochemical growth method using a nano casting mold so that a mono-crystalline copper oxide nano wire array can be manufactured.
申请公布号 KR20120080325(A) 申请公布日期 2012.07.17
申请号 KR20110001703 申请日期 2011.01.07
申请人 KONKUK UNIVERSITY INDUSTRIAL COOPERATION CORP. 发明人 PARK, BAE HO;KANG, SUNG OONG
分类号 C23C16/06;B82B3/00;C23C16/44;C25D11/04 主分类号 C23C16/06
代理机构 代理人
主权项
地址
您可能感兴趣的专利