发明名称 Photomask blank manufacturing method and photomask manufacturing method
摘要 A thin film made of a material containing a metal and silicon is formed on a light-transmissive substrate. Then, a treatment is performed to modify a main surface of the thin film in advance so that when exposure light having a wavelength of 200 nm or less is accumulatively irradiated on a thin film pattern of a photomask to be produced by patterning the thin film, the transfer characteristic of the thin film pattern does not change more than a predetermined degree. This treatment is performed by carrying out, for example, a heat treatment in an atmosphere containing oxygen at 450° C. to 900° C.
申请公布号 US8221941(B2) 申请公布日期 2012.07.17
申请号 US20090647808 申请日期 2009.12.28
申请人 SUZUKI TOSHIYUKI;HASHIMOTO MASAHIRO;ONO KAZUNORI;OHKUBO RYO;SAKAI KAZUYA;HOYA CORPORATION 发明人 SUZUKI TOSHIYUKI;HASHIMOTO MASAHIRO;ONO KAZUNORI;OHKUBO RYO;SAKAI KAZUYA
分类号 G03F1/22;G03F1/50;G03F1/54 主分类号 G03F1/22
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