发明名称 |
Photomask blank manufacturing method and photomask manufacturing method |
摘要 |
A thin film made of a material containing a metal and silicon is formed on a light-transmissive substrate. Then, a treatment is performed to modify a main surface of the thin film in advance so that when exposure light having a wavelength of 200 nm or less is accumulatively irradiated on a thin film pattern of a photomask to be produced by patterning the thin film, the transfer characteristic of the thin film pattern does not change more than a predetermined degree. This treatment is performed by carrying out, for example, a heat treatment in an atmosphere containing oxygen at 450° C. to 900° C. |
申请公布号 |
US8221941(B2) |
申请公布日期 |
2012.07.17 |
申请号 |
US20090647808 |
申请日期 |
2009.12.28 |
申请人 |
SUZUKI TOSHIYUKI;HASHIMOTO MASAHIRO;ONO KAZUNORI;OHKUBO RYO;SAKAI KAZUYA;HOYA CORPORATION |
发明人 |
SUZUKI TOSHIYUKI;HASHIMOTO MASAHIRO;ONO KAZUNORI;OHKUBO RYO;SAKAI KAZUYA |
分类号 |
G03F1/22;G03F1/50;G03F1/54 |
主分类号 |
G03F1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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