发明名称 |
NAND flash memory programming |
摘要 |
A programming method and memory structure for preventing punch-through in a short channel source-side select gate structure includes adjusting voltages on the selected and unselected bitlines, and the program, pass, and select gate voltages. |
申请公布号 |
US8223549(B2) |
申请公布日期 |
2012.07.17 |
申请号 |
US20090627448 |
申请日期 |
2009.11.30 |
申请人 |
ARITOME SEIICHI;LIU HAITAO;LI DI;MICRON TECHNOLOGY, INC. |
发明人 |
ARITOME SEIICHI;LIU HAITAO;LI DI |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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