发明名称 |
Method for manufacturing semiconductor device, and polishing apparatus |
摘要 |
An interlayer insulating film is formed on a semiconductor substrate having a semiconductor element formed thereon. At this time, there are protrusions higher than surroundings thereof and non-protruding portions lower than the protrusions on the surface of the interlayer insulating film. First, a first polishing process is carried out on the surface of the interlayer insulating film with use of a first abrasive having non-Prestonian properties produced by mixing abrasive materials including abrasive grains, a polymer additive and water at a predetermined first mixture ratio. Then, after the first abrasive process shifts to an automatically stopping state, a second polishing process is carried out on the surface of the interlayer insulating film with use of a second abrasive having the concentration of polymer additive lower than that of the first abrasive and produced by mixing the abrasive materials at a second mixture ratio different from the first mixture ratio. |
申请公布号 |
US8222144(B2) |
申请公布日期 |
2012.07.17 |
申请号 |
US20090462249 |
申请日期 |
2009.07.30 |
申请人 |
KAMIKUBO NORITAKA;YAMAUCHI HIROSHI;SHARP KABUSHIKI KAISHA |
发明人 |
KAMIKUBO NORITAKA;YAMAUCHI HIROSHI |
分类号 |
H01L21/302;B24B37/00;B24B37/07;H01L21/304;H01L21/461 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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