| 摘要 |
PURPOSE: An exhaust gas absorbent for a semiconductor etching process and a method for treating exhaust gas using the absorbent are provided to improve stability to exhaust gas from the semiconductor etching process by including a layered compound, a first absorption active component, and inorganic moisturizer. CONSTITUTION: An exhaust gas absorbent for a semiconductor etching process includes a layered compound, an absorption active component, and inorganic moisturizer. The first absorption active component is one or more selected from a group including an alkali metal-based compound, an alkali earth metal-based compound, and an iron oxide-based compound. The layered compound is selected from a group including bentonite, hydrotalcite, montmorillonite, and vermiculite. The first absorption active compound is one or more selected from a group including sodium hydroxide, potassium hydroxide, magnesium hydroxide, calcium hydroxide, strontium hydroxide, FeO, FeO(OH), Fe_2O_3, and Fe_3O_4. The inorganic moisturizer is selected from tetraethyl orthosilicate, zirconium propoxide, titanium t-butoxide, and the mixture of the same. |
