| 摘要 |
New designs for silicon carbide (SiC) bipolar junction transistors (BJTs) and new methods of manufacturing such SiC BJTs are provided. The SiC BJT can include a collector region, a base region, and an emitter region where the collector region, the base region, and the emitter region are arranged as a stack. The emitter region can form an elevated structure defined by outer sidewalls disposed on the stack. The base region can have a portion interfacing the emitter region and defining an intrinsic base region. The intrinsic base region can include a first portion laterally spaced away from the outer sidewalls of the emitter region by a second portion of the base region that has a dopant dose higher than a dopant dose of the first portion. |
