发明名称 |
Method for manufacturing NAND memory cells |
摘要 |
A method for manufacturing NAND memory cells includes providing a substrate having a first doped region formed therein; forming a first dielectric layer, a storage layer and a patterned hard mask on the substrate; forming a STI in the substrate through the patterned hard mask and removing the patterned hard mask to define a plurality of recesses; forming a second dielectric layer and a first conductive layer filling the recesses on the substrate; and performing a planarization process to remove a portion of the first conductive layer and the second dielectric layer to form a plurality of self-aligned islanding gate structures. |
申请公布号 |
US8222112(B2) |
申请公布日期 |
2012.07.17 |
申请号 |
US201113114045 |
申请日期 |
2011.05.24 |
申请人 |
HUANG CHUN-SUNG;SHIH PING-CHIA;YANG CHIAO-LIN;HUANG CHI-CHENG;UNITED MICROELECTRONICS CORP. |
发明人 |
HUANG CHUN-SUNG;SHIH PING-CHIA;YANG CHIAO-LIN;HUANG CHI-CHENG |
分类号 |
H01L29/792;H01L21/336 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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