发明名称 |
Method of forming MOS device |
摘要 |
A method for forming a metal-oxide-semiconductor (MOS) device includes at least steps of forming a pair of trenches in a substrate at both sides of a gate structure, filling the trenches with a silicon germanium layer by a selective epitaxy growth process, forming a cap layer on the silicon germanium layer by a selective growth process, and forming a pair of source/drain regions by performing an ion implantation process. Hence, the undesirable effects caused by ion implantation can be mitigated. |
申请公布号 |
US8222113(B2) |
申请公布日期 |
2012.07.17 |
申请号 |
US20090469135 |
申请日期 |
2009.05.20 |
申请人 |
TING SHYH-FANN;HSU SHIH-CHIEH;HUANG CHENG-TUNG;WU CHIH-CHIANG;HUNG WEN-HAN;WU MENG-YI;JENG LI-SHIAN;SHIH CHUNG-MIN;LEE KUN-HSIEN;CHENG TZYY-MING;UNITED MICROELECTRONICS CORP. |
发明人 |
TING SHYH-FANN;HSU SHIH-CHIEH;HUANG CHENG-TUNG;WU CHIH-CHIANG;HUNG WEN-HAN;WU MENG-YI;JENG LI-SHIAN;SHIH CHUNG-MIN;LEE KUN-HSIEN;CHENG TZYY-MING |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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