发明名称 Eliminate release etch attack by interface modification in sacrificial layers
摘要 Methods of making a microelectromechanical system (MEMS) device are described. In some embodiments, the method includes forming a sacrificial layer over a substrate, treating at least a portion of the sacrificial layer to form a treated sacrificial portion, forming an overlying layer over at least a part of the treated sacrificial portion, and at least partially removing the treated sacrificial portion to form a cavity situated between the substrate and the overlying layer, the overlying layer being exposed to the cavity.
申请公布号 US8222066(B2) 申请公布日期 2012.07.17
申请号 US20080061592 申请日期 2008.04.02
申请人 TU THANH NGHIA;LUO QI;YANG CHIA WEI;HEALD DAVID;GOUSEV EVGENI;CHIANG CHIH-WEI;QUALCOMM MEMS TECHNOLOGIES, INC. 发明人 TU THANH NGHIA;LUO QI;YANG CHIA WEI;HEALD DAVID;GOUSEV EVGENI;CHIANG CHIH-WEI
分类号 H01L21/00 主分类号 H01L21/00
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