Vertical light emitting diode device structure and method of fabricating the same

摘要

A method of fabricating a compound semiconductor vertical LED is provided. A first growth substrate capable of supporting compound semiconductor epitaxial growth thereon is provided. One or more epitaxial layers of compound semiconductor material such as GaN or InGaN is formed on the first growth substrate to create a portion of a vertical light emitting diode. Plural trenches are formed in the compound semiconductor material. Passivating material is deposited in one or more trenches. A hard material is at least partially deposited in the trenches and optionally on portions of the compound semiconductor material. The hard material has a hardness greater than the hardness of the compound semiconductor. A metal layer is deposited over the compound semiconductor material followed by metal planarization. A new host substrate is bonded to the metal layer and the first growth substrate is removed. Dicing is used to form individual LED devices.