| 摘要 |
PURPOSE: A semiconductor device and a forming method thereof are provided to obtain a semiconductor substrate area of a peripheral circuit region enough by uniformly forming the thickness of a spacer of a peripheral circuit gate. CONSTITUTION: An LDD(Lightly Doped Drain) region(25) and a junction region(26) are formed on a semiconductor substrate which is adjacent to an NMOS(N-channel Metal Oxide Semiconductor) gate(20A) and a PMOS(P-channel Metal Oxide Semiconductor) gate(20B). A peripheral circuit contact(32) connected with a metal line(34) is formed in the junction region. A recess having a predetermined depth is formed on an active region(14) of a cell region and an element isolation film(12). A buried gate(50) is formed at the lower side of the recess. A bit line is formed at the upper side of the semiconductor substrate.
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