PURPOSE: An integrated chip structure of a battery protection circuit is provided to reduce an entire size by arranging a partial resistance and a capacitor in inside. CONSTITUTION: A dual FET(Field Effect Transistor) chip(110) comprises a first FET and a second FET of a common drain structure. A protection IC(Integrated Circuit)(120) senses an over discharge state in the discharge of a battery and stops a discharge motion of the battery by controlling the first FET in the over discharge. The protection IC is laminated on a part of the upper side of the dual FET ship. Capacitors(C1, C2, C3) are formed into a structure interlinking source and drain electrodes. The capacitors are laminated on the upper side of the dual FET chip.
申请公布号
KR20120080073(A)
申请公布日期
2012.07.16
申请号
KR20110001525
申请日期
2011.01.06
申请人
ITM SEMICONDUCTOR CO., LTD.
发明人
NA, HYEOK HWI;YU, GI SU;KIM, YOUNG SEOK;AHN, SANG HOON;PARK, SUNG BEUM;JUNG, TAE HWAN;PARK, SEUNG WOOK;CHO, HYUN MOK;PARK, SUN BOK;PARK, JAE GOO;CHAE, YOON HEE;YOON, YOUNG GEUN;JU, SEONG HO