发明名称 |
DIAZADIENE-BASED METAL COMPOUND, METHOD FOR PREPARING SAME AND METHOD FOR FORMING A THIN FILM USING SAME |
摘要 |
The present invention relates to a diazadiene (DAD)-based metal compound, to a method for preparing the same and to a method for forming a thin film using the same. The diazadiene (DAD)-based metal compound of the present invention is provided in a gaseous state to be formed into a metal thin film or a metal oxide thin film by chemical vapor deposition or atomic layer deposition. Particularly, the diazadiene-based organic metal compound of the present invention has advantages in that it may be formed into a metal thin film or a metal oxide thin film and it can be prepared in a relatively inexpensive way without using highly toxic ligands. |
申请公布号 |
WO2012067439(A3) |
申请公布日期 |
2012.07.12 |
申请号 |
WO2011KR08791 |
申请日期 |
2011.11.17 |
申请人 |
UP CHEMICAL CO., LTD.;HAN, WON SEOK |
发明人 |
HAN, WON SEOK |
分类号 |
C23C16/18;C23C16/44 |
主分类号 |
C23C16/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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