MEMORY DEVICE, DISPLAY DEVICE EQUIPPED WITH MEMORY DEVICE, DRIVE METHOD FOR MEMORY DEVICE, AND DRIVE METHOD FOR DISPLAY DEVICE

摘要

Provided is a memory device that allows an amount of leakage into a first retaining section to which a binary logic level is written to be balanced between different circuit states. A predetermined period is set in which in a state where a first control section turns off an output element, (i) a first retaining section and a second retaining section retain an identical binary logic level, (ii) an electric potential of a voltage supply is set to one of a first electric potential level and a second electric potential level, (iii) the other one of the first electric potential level and the second electric potential level is supplied from a column driver to a fourth wire, and (iv) subsequently the fourth wire is shifted to a floating state.