SEMICONDUCTOR FILM, SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor film with stable characteristics, a semiconductor element with stable characteristics, and a semiconductor device with stable characteristics.

SOLUTION: Specifically, an oxide semiconductor film includes a seed crystal layer (seed layer) including crystal with a first crystal structure having one surface in contact with an insulation surface and the other surface of the seed crystal layer (seed layer) with grown anisotropic crystal. With such a hetero structure, the semiconductor film can have stable electric characteristics.

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