| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with low on-resistance and high avalanche resistance. <P>SOLUTION: A semiconductor device of the present invention comprises: first source portions S1 each having first source contact regions 21 of a second conductivity type and a back-gate contact region 22 of a first conductivity type; second source portions S2 that have a second source contact region 24 of the second conductivity type and does not have the back-gate contact region of the first conductivity type; and drain portions D having a drain contact region 15 of the second conductivity type, a first drift region 16 of the second conductivity type formed at the first source contact region 21 side, and a second drift region 17 of the second conductivity type formed at the second source contact region 24 side. The length in the channel length direction of the second drift region 17 is longer than that of the first drift region 16. <P>COPYRIGHT: (C)2012,JPO&INPIT |
