| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem that trenches are not formed normally at edges of a memory cell region in forming the trenches on a semiconductor substrate in the memory cell region by using a self-alignment double patterning process, in manufacturing a semiconductor device having the memory cell region and peripheral circuit regions at an outer periphery of the memory cell region. <P>SOLUTION: A first mask pattern in a memory cell region is formed as a line pattern with a width W1 and a pitch W3 (where, W3>2×W1), and then a sacrificial film is formed on the pattern so that gaps with a width of W1 remain. After that, a film serving as a second mask pattern is formed by an application method, and then a surface of the first mask pattern is exposed by etchback of the sacrificial film and the film serving as the second mask pattern. Then, the sacrificial film between the first and second mask patterns is selectively removed to form a trench pattern. In peripheral circuit regions, the first mask pattern is not formed except for the boundary between the memory cell region and the peripheral circuit regions. The width W2 of the first mask pattern formed in the boundary is set to be one to four times of W1. <P>COPYRIGHT: (C)2012,JPO&INPIT |
