SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a technique for reducing consumption of a material gas and a reaction gas.

SOLUTION: A substrate processing method performs the following steps alternately several times: a film generation step S1 of forming a silicon-containing film with respect to a substrate in a processing chamber while supplying and exhausting a hydrogen-containing gas and a silicon-containing gas to and from the substrate and absorbing heat from the substrate; and a temperature re-raising step S2 of stopping supply of the hydrogen-containing gas and the silicon-containing gas and raising the temperature of the substrate. This enables suppression of a decrease in a growth rate of the silicon-containing film, thereby reducing the consumption of a material gas and a reaction gas.

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