DIFFUSION BARRIER LAYERS AND METHODS OF FORMING SAME

摘要

PROBLEM TO BE SOLVED: To provide a method for use in fabrication of integrated circuits including: providing a substrate assembly having a surface; and forming a barrier layer over at least a portion of the surface.

SOLUTION: The barrier layer 14 is formed of a platinum(x):ruthenium(1-x) alloy, where x is in the range from about 0.60 to about 0.995; preferably, x is in the range from about 0.90 to about 0.98. The barrier layer 14 may be formed by chemical vapor deposition and at least a portion of the surface upon which the barrier layer 14 is formed may be a silicon-containing surface. The method is used in formation of capacitors, storage cells, contact linings, etc.

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