| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a large spin polarization current. <P>SOLUTION: A monocrystalline MgO layer is grown on a Si monocrystalline substrate, and a lattice is matched. Furthermore, a ferromagnetic metal layer is formed thereon. A (100) growth face of the MgO layer is formed on a (100) face of the Si monocrystalline substrate. Here, on an interface of the Si monocrystalline substrate and the MgO layer, a Si(100)[110] direction is parallel to a MgO(100)[100] direction. Figure 2(a) shows the Si(100) face, Figure 2(b) shows the MgO(100) face, and Figure 2(c) shows a status that lattices of the two faces are matched with each other. The Si(100) face (a) is constituted by only Si atoms 111, and the MgO(100) face (b) is constituted by Mg atoms 121 and oxygen (O) atoms 122. Here, the MgO(100) face is grown on the Si(100) face, and as shown in Figure 2(c), on the interface, the Si(100)[110] direction is parallel to the MgO(100)[100] direction. <P>COPYRIGHT: (C)2012,JPO&INPIT |
