| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device for measuring characteristic of a memory cell of a large scaled SRAM with high accuracy, and also an evaluation method using the same. <P>SOLUTION: The semiconductor device including a plurality of evaluation cells aligned in the matrix state for evaluating the characteristic of the memory cell of the large scaled SRAM is used. The evaluation cells are constituted of composite cells consisting of memory cells for measurement and dummy memory cells aligned around the memory cells for measurement. The semiconductor device comprises a selection circuit selected by a selection signal to operate the evaluation cells and transistors for arranging input-output lines for measuring electrical characteristics, word lines and bit lines to be connected or unconnected to the memory cells for measurement by output of the selection circuit. <P>COPYRIGHT: (C)2012,JPO&INPIT |
